sop8 plastic-encapsulate mosfets CJQ4822 dual n-channel mosfet description the CJQ4822 uses advanced trench te chnology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t 10s ) (note 1) i d 8.5 a pulsed drain current (note 2) i dm 30 a power dissipation p d 1.4 w thermal resistance from junction to ambient (t 10s ) (note 1) r ja 89 /w junction temperature t j 150 storage temperature t stg -55~+150 sop8 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =24v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =8.5a 16 m ? drain-source on-resistance (note 3) r ds(on) v gs =4.5v, i d =6a 26 m ? forward tranconductance (note 3) g fs v ds =5v, i d =8.5a 20 s diode forward voltage (note 3) v sd i s =1a, v gs = 0v 1 v dynamic parameters (note 4) input capacitance c iss 1250 pf output capacitance c oss 180 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 110 pf switching parameters (note 4) turn-on delay time t d(on) 7.5 ns turn-on rise time t r 6.5 ns turn-off delay time t d(off) 25 ns turn-off fall time t f v gs =10v,v ds =15v, r l =1.8 ? ,r gen =3 ? 5 ns total gate charge (10v) 23 nc total gate charge (4.5v) q g 11.2 nc gate-source charge q gs 2.6 nc gate-drain charge q gd v ds =15v,v gs =10v,i d =8.5a 4.2 nc notes : 1. the value of r ja is measure with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 . the value in any given application depends on the user ?s specific board design. the current rating is based on the t 10s thermal resistance rating. 2. repetitive rating : pulse width limited by junction temperature. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not s ubject to production testing. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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